Semiconductor devices — US PTAB Patent Cases
97 decisions indexed
Page 4 of 4 · 97 total
Monolithic Power Systems, Inc. v.Greenthread, LLC
Monolithic Power Systems challenges U.S. Patent No. 10,734,481 in an IPR based on obviousness (103). The petitioner argues that the semiconductor device claims are anticipated or rendered obvious by prior art references including Kawagoe, Onoda, and Nishizawa. The Board has instituted the case, finding compelling evidence of unpatentability.
Runergy Alabama Inc et al. v.Trina Solar Co. Ltd.
The PTAB institution decision granted the petitioner a reasonable likelihood of prevailing on all challenged claims related to solar cell technology. The grounds for obviousness centered on combining prior art references like Jin and Feldmann to achieve predictable improvements in TOPCon structure efficiency.
Monolithic Power Systems, Inc. v.Greenthread, LLC
Monolithic Power Systems successfully obtained institution of an IPR against Greenthread’s 9,190,502 patent covering graded‑dopant semiconductor devices. The Board found a reasonable likelihood of unpatentability on claims 7 and 8 based on obviousness over Onoda, Nishizawa, and Kawagoe. The proceeding now moves to trial.
Monolithic Power Systems, Inc. v.Greenthread, LLC
Monolithic Power Systems filed a response opposing Greenthread’s request for Director Review of a PTAB decision that found the ’195 patent claims unpatentable. The petitioner contends the Board correctly applied prosecution history and that the request merely repeats arguments already rejected in multiple IPRs.
Monolithic Power Systems, Inc. v.Greenthread, LLC
Monolithic Power Systems filed a Director Review request challenging the PTAB’s claim construction and obviousness finding for its MOSFET doping‑profile patent (U.S. 9,190,502). The petitioner argues the Board misinterpreted functional claim language and ignored district‑court rulings, asserting that the cited references do not teach the required carrier‑movement limitation.
Monolithic Power Systems, Inc. v.Greenthread, LLC
Monolithic Power Systems challenged U.S. Patent No. 9,190,502 regarding semiconductor device claims (7 and 8) in an IPR proceeding. The Petitioner argues that the claimed graded dopant profiles and electric drift fields are obvious over prior art references like Onoda and Kawagoe. The Board has instituted the case for trial, finding the evidence compelling enough to proceed with the challenge.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged several claims in the NAND Flash patent, establishing a reasonable likelihood of prevailing on its obviousness grounds. The Board found that modifying TAC shapes and implementing dummy channels were simple advancements supported by prior art.
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