Semiconductor devices — US PTAB Patent Cases
97 decisions indexed
Page 2 of 4 · 97 total
GLOBALFOUNDRIES Inc. et al. v.OAK IP LLC
GlobalFoundries has filed an IPR petition challenging 21 claims of Oak IP’s ’691 patent covering metal‑semiconductor junctions. The petition relies on U.S. Patent No. 7,176,483 for anticipation and on a combination of that patent with U.S. Patent No. 7,727,882 for obviousness, while also raising written‑description and enablement issues.
NXP Semiconductors N .V. et al. v.Harbor Island Dynamic, LLC
Samsung and NXP successfully invalidated a large portion of Harbor Island Dynamic's patent portfolio in the IPR proceeding. The Board found multiple claims unpatentable based on anticipation (102) and obviousness (103) using prior art references like Yu, Okashita, and Burgener. This final decision significantly weakens the patent owner’s position in semiconductor device technology.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied institution of an IPR challenge brought by Micron Technology against Yangtze Memory Technologies regarding 3D memory device patents. The Board found the Petitioner failed to meet its burden of showing a reasonable likelihood of prevailing over prior art references.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR petition against Yangtze Memory Technologies was denied by the PTAB. The Board found that Micron failed to demonstrate a reasonable likelihood of prevailing on the merits, specifically regarding obviousness over prior art Costa in 3D memory technology.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB granted institution of IPR for Micron against Yangtze Memory Technologies regarding 3D NAND memory claims. The Board found a reasonable likelihood of prevailing on obviousness grounds over Kim, Park, and Fang.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments secured a joint IPR, expanding its challenge to Greenthread’s 10,510,842 patent covering graded dopant semiconductor devices. The Board instituted review of all 18 claims and approved the joinder, citing a reasonable likelihood of success and no prejudice to the existing proceeding.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments Incorporated filed a Petition challenging U.S. Patent No. 10,510,842, asserting that the claims are obvious under 35 U.S.C. § 103. The petitioner argues that various combinations of prior art references render the patented technology predictable and non-novel in advanced CMOS fabrication.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured the institution of an IPR against Yangtze Memory Technologies' patent 11,101,276 B2. The Board found a reasonable likelihood that Micron can prove obviousness over prior art references like Kim and Fang.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology initiated an IPR against Yangtze Memory Technologies regarding NAND Flash memory claims, challenging the patent on grounds of anticipation and obviousness. The Board found a reasonable likelihood of unpatentability for several key claims over prior art (Dong), leading to the institution of the proceeding.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned the PTAB to challenge a key claim in Yangtze Memory Technologies' patent. The Board granted institution based on obviousness over prior art references like Kim and Nam, advancing the dispute into an active IPR phase.
Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC
The PTAB denied Samsung Electronics' IPR petition against SiOnyx, LLC due to significant overlap with a parallel district court case. The Board found that the proximity of the trial date and overlapping issues outweighed the Petitioner’s strong merits arguments regarding anticipation and obviousness in semiconductor technology.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
Innoscience seeks to invalidate all 17 claims of Infineon’s 8,686,562 patent covering III‑V semiconductor electrical contacts, arguing they are anticipated or obvious over four prior‑art references.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
The PTAB instituted the IPR challenge by Innoscience America against Infineon Technologies' patent covering semiconductor devices. The Board found a reasonable likelihood of anticipation for several claims over the prior art reference Usui, while also finding merit in the obviousness arguments.
YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies (YMTC) successfully petitioned to challenge Micron Technology's patent, leading the Board to institute the IPR. The petitioner argued that prior art disclosed or suggested key elements of flash memory technology. This decision allows YMTC to proceed with challenging claims related to semiconductor device structures.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging all 14 claims of Yangtze Memory’s ESD bus patent, arguing obviousness over Yoshinaga, Saint, and Haralabidis and asserting no discretionary denial grounds.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR challenge against Yangtze Memory Technologies regarding 3D memory structures was denied by the PTAB. The Board found that Micron failed to demonstrate a reasonable likelihood of success on its obviousness grounds over prior art combinations.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned to challenge key claims in a semiconductor memory patent held by Yangtze Memory Technologies, leading to institution at the PTAB. The Board focused on obviousness (103) over Nakajima, balancing technical merits with parallel litigation factors.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution in a PTAB proceeding against Yangtze Memory Technologies regarding non-volatile memory technology. The Board found sufficient evidence to proceed on multiple grounds of obviousness over prior art references Lee, Zhao, and Yang.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that the patent claims were unpatentable over combinations of prior art references. Specifically, the Petitioner successfully demonstrated obviousness against Zhao and Lee, leading to the rejection of nearly all challenged claims.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
Innoscience America petitions the PTAB to institute an IPR against Infineon's 9,070,755 transistor patent, seeking cancellation of all 14 claims on the basis of anticipation and obviousness over Fujishima and related prior art. The petition argues that discretionary denial is improper and requests the Board find the claims unpatentable.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
The PTAB denied Innoscience America's petition to institute IPR against Infineon Technologies regarding patent 9070755. The Board found that factors favoring discretionary denial, such as overlap with a parallel ITC investigation, outweighed arguments for institution.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments Incorporated filed a petition challenging U.S. Patent No. 8,421,195 regarding CMOS fabrication/doping profiles. The petitioner asserts that the claims are anticipated or obvious based on numerous prior art references including Onoda and Payne. This challenges the patent's validity in semiconductor device technology.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung has filed an IPR petition seeking cancellation of all 19 claims of Harbor Island Dynamic’s ’886 SOI switching circuit patent, alleging anticipation and obviousness over Okashita, Yu, and Burgener. The petition argues that the Board should institute review and that denial is not warranted under Fintiv and §325(d).
Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC
Samsung has filed an IPR petition seeking cancellation of all 55 claims of SiOnyx’s U.S. Patent 11,069,737 covering textured‑layer image sensors. The petition relies on five prior‑art references to argue anticipation and obviousness under §§ 102 and 103 and asks the Board not to deny institution.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung Electronics successfully petitioned the PTAB against Harbor Island Dynamic's patent, leading to an institution decision. The Board found a reasonable likelihood of anticipation for claim 1 based on Okashita prior art and determined that combining structures would render other claims obvious.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
The PTAB issued a Final Written Decision finding all 18 challenged claims unpatentable by a preponderance of the evidence. The Petitioner successfully demonstrated anticipation under § 102 and obviousness under § 103, primarily using prior art reference Cooney.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung Electronics successfully secured institution at the PTAB for its IPR against Harbor Island Dynamic's patent 9245826. The Board found a reasonable likelihood of prevailing on multiple claims based on anticipation and obviousness grounds. This decision sets the stage for a full trial regarding semiconductor device technology.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies, Inc. failed its IPR challenge against a patent owned by Godo Kaisha IP Bridge 1 regarding Magnetic Tunnel Junctions (MTJ). The PTAB denied the petition on obviousness grounds (103), finding that the petitioner could not establish a reasonable likelihood of prevailing.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
The PTAB found claims 1 and 2 unpatentable over the combination of Bowen and Parkin's prior art references. The Board concluded that combining these references taught all elements of the challenged claims, including a rationale for using amorphous, annealed CoFeB electrodes to achieve high TMR. Claims 3 and 4 were not found unpatentable.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.
Hanwha Solutions Corporation has filed a petition challenging Maxeon Solar Pte. Ltd.'s solar cell patent based on obviousness under 35 U.S.C. §103. The petitioner argues that the claimed features, such as FSF doping and gettering, are conventional and render the invention predictable when combined with existing prior art.
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