Industry Sector

Semiconductor devices — US PTAB Patent Cases

83 decisions indexed

Page 2 of 3 · 83 total

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00795

Micron Technology successfully secured institution in a PTAB proceeding against Yangtze Memory Technologies regarding non-volatile memory technology. The Board found sufficient evidence to proceed on multiple grounds of obviousness over prior art references Lee, Zhao, and Yang.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00794

Micron Technology successfully secured institution in this IPR against Yangtze Memory Technologies regarding 3D NAND memory claims. The Board found a reasonable likelihood of obviousness over Park et al., despite the Patent Owner's challenges to key claim terms like 'trenches.'

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00792

Micron Technology successfully petitioned the PTAB to challenge Yangtze Memory Technologies' patent claims related to 3D-NAND memory operation, leading to the institution of the IPR. The Board found a reasonable likelihood that Micron would prevail on its challenges regarding anticipation and obviousness over multiple prior art references.

patent instituted

Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.

· IPR2024-00791

Micron Technology challenged YANGTZE MEMORY TECHNOLOGIES COMPANY over its 3D NAND Memory technology in an IPR proceeding. The PTAB institution decision found a reasonable likelihood of obviousness based on prior art, moving the case into trial preparation.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00790

Micron Technology successfully challenged Yangtze Memory Technologies' patent claims in a PTAB Institution Decision regarding obviousness over Kim and Tessariol. The Board adopted the Petitioner's definition of 'surrounding' as 'encircling,' finding a reasonable likelihood that Micron will prevail against the patent.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00788

Micron Technology successfully secured institution at the PTAB against Yangtze Memory Technologies regarding claims related to 3D memory devices. The Board found sufficient evidence for unpatentability under both §102 and §103 over prior art references Toyama, Mushiga, and Makala.

patent Final Written Decision

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00788

Micron successfully established the unpatentability of five claims (15, 16, 17, 19, and 20) over prior art references Toyama, Mushiga, and Makala. The Board found that various embodiments in the prior art taught all limitations of the challenged claims.

patent instituted

Aptiv Services US, LLC et al. v.Microchip Technology, Inc.

· IPR2024-00646

Aptiv Services challenged Microchip Technology's patent (9471074) in an IPR, arguing obviousness over Al-Shyoukh in view of Ivanov and Stanescu. The PTAB institution decision granted the petition, proceeding to trial on 18 claims.

patent instituted

MediaTek Inc. et al. v.MOSAID Technologies Inc.

· IPR2024-00599

MediaTek successfully challenged MOSAID's patent (7224563) in the PTAB, leading to institution of the IPR. The Board found a reasonable likelihood of prevailing on multiple grounds of obviousness over prior art references like Tam and Huard.

patent mixed - some claims cancelled, some upheld

NXP Semiconductors N .V. et al. v.Harbor Island Dynamic, LLC

· IPR2025-00954

Samsung and NXP successfully invalidated a large portion of Harbor Island Dynamic's patent portfolio in the IPR proceeding. The Board found multiple claims unpatentable based on anticipation (102) and obviousness (103) using prior art references like Yu, Okashita, and Burgener. This final decision significantly weakens the patent owner’s position in semiconductor device technology.

patent Final Written Decision

Runergy Alabama Inc et al. v.Trina Solar Co. Ltd.

· IPR2025-00007

The PTAB issued a Final Written Decision finding all 11 challenged claims unpatentable under 35 U.S.C. § 103(a). The Board found that the Petitioner successfully demonstrated obviousness over combinations of prior art, specifically involving Chang and Jin for isolation regions in solar cells.

patent Final Written Decision

Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC

· IPR2024-01404

The PTAB issued a Final Written Decision finding all 18 challenged claims unpatentable by a preponderance of the evidence. The Petitioner successfully demonstrated anticipation under § 102 and obviousness under § 103, primarily using prior art reference Cooney.

patent final

Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC

· IPR2024-01402

The Board issued a final decision finding that all challenged claims (19) were unpatentable. Petitioner successfully argued obviousness and anticipation based on combining prior art references in the field of SOI switching circuits.

patent instituted

BOE Technology Group Co., LTD v.Optronic Sciences, LLC

· IPR2024-01315

BOE Technology Group Co., LTD successfully petitioned to institute an IPR against Optronic Sciences, LLC's patent 8158477. The Board found a reasonable likelihood of prevailing on obviousness grounds over multiple prior art references.

patent instituted

Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC

· IPR2024-01402

Samsung Electronics successfully petitioned the PTAB against Harbor Island Dynamic's patent, leading to an institution decision. The Board found a reasonable likelihood of anticipation for claim 1 based on Okashita prior art and determined that combining structures would render other claims obvious.

patent instituted

Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC

· IPR2024-01405

Samsung Electronics successfully secured institution at the PTAB for its IPR against Harbor Island Dynamic's patent 9245826. The Board found a reasonable likelihood of prevailing on multiple claims based on anticipation and obviousness grounds. This decision sets the stage for a full trial regarding semiconductor device technology.

patent instituted

Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC

· IPR2024-01431

Samsung Electronics Co., Ltd. successfully petitioned for institution in its IPR against SiOnyx, LLC's patent (US 11069737). The Board found a reasonable likelihood of prevailing on the merits against both Haddad138 and Yap regarding image sensor technology claims.

patent denied

Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1

· IPR2024-01449

Western Digital Technologies, Inc. failed its IPR challenge against a patent owned by Godo Kaisha IP Bridge 1 regarding Magnetic Tunnel Junctions (MTJ). The PTAB denied the petition on obviousness grounds (103), finding that the petitioner could not establish a reasonable likelihood of prevailing.

patent instituted

Runergy Alabama Inc et al. v.Trina Solar Co. Ltd.

· IPR2025-00006

The PTAB institution decision granted the petitioner a reasonable likelihood of prevailing on all challenged claims related to solar cell technology. The grounds for obviousness centered on combining prior art references like Jin and Feldmann to achieve predictable improvements in TOPCon structure efficiency.

patent denied

Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.

· IPR2025-00010

The PTAB denied Innoscience America's petition to institute IPR against Infineon Technologies regarding patent 9070755. The Board found that factors favoring discretionary denial, such as overlap with a parallel ITC investigation, outweighed arguments for institution.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2025-00034

Micron Technology successfully petitioned to challenge key claims in a semiconductor memory patent held by Yangtze Memory Technologies, leading to institution at the PTAB. The Board focused on obviousness (103) over Nakajima, balancing technical merits with parallel litigation factors.

patent denied

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2025-00035

Micron Technology's IPR challenge against Yangtze Memory Technologies regarding 3D memory structures was denied by the PTAB. The Board found that Micron failed to demonstrate a reasonable likelihood of success on its obviousness grounds over prior art combinations.

patent denied

Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC

· IPR2025-00064

The PTAB denied Samsung Electronics' IPR petition against SiOnyx, LLC due to significant overlap with a parallel district court case. The Board found that the proximity of the trial date and overlapping issues outweighed the Petitioner’s strong merits arguments regarding anticipation and obviousness in semiconductor technology.

patent denied

Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC

· IPR2025-00065

Samsung Electronics' IPR challenge against SiOnyx, LLC was denied by the PTAB due to significant overlap with parallel district court litigation. The Board exercised its discretion under Fintiv guidance, prioritizing efficiency over the merits of the invalidity arguments.

patent instituted

Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.

· IPR2025-00094

The PTAB granted institution of IPR for Innoscience America against Infineon Technologies, challenging 16 claims related to merged cascode transistors. The Board found a reasonable likelihood of unpatentability based on prior art combinations.

patent instituted

Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.

· IPR2025-00098

Yangtze Memory Technologies Company successfully convinced the PTAB to institute proceedings against Micron Technology for patent infringement. The Board found that Petitioner showed a reasonable likelihood of prevailing on at least one claim, despite arguments regarding foreign state actor status and RPI issues.

patent instituted

YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.

· IPR2025-00099

Yangtze Memory Technologies (YMTC) successfully petitioned to challenge Micron Technology's patent, leading the Board to institute the IPR. The petitioner argued that prior art disclosed or suggested key elements of flash memory technology. This decision allows YMTC to proceed with challenging claims related to semiconductor device structures.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2025-00117

The PTAB granted institution of IPR for Micron against Yangtze Memory Technologies regarding 3D NAND memory claims. The Board found a reasonable likelihood of prevailing on obviousness grounds over Kim, Park, and Fang.

patent denied

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2025-00119

The PTAB denied Micron's second IPR petition against Yangtze Memory's 3D memory patent (10,879,254), citing the overlap of asserted prior art knowledge with a previously instituted review.

patent instituted

Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.

· IPR2025-00175

The PTAB instituted the IPR challenge by Innoscience America against Infineon Technologies' patent covering semiconductor devices. The Board found a reasonable likelihood of anticipation for several claims over the prior art reference Usui, while also finding merit in the obviousness arguments.

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