Industry Sector

Semiconductor devices — US PTAB Patent Cases

83 decisions indexed

Page 1 of 3 · 83 total

patent instituted

Texas Instruments Incorporated v.Greenthread, LLC

· IPR2024-00674

Texas Instruments challenged Greenthread's patent on CMOS fabrication methods using multiple prior art references under 35 U.S.C. § 103. The Board found the merits strong, leading to institution of the petition.

patent Final Written Decision

Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1

· IPR2024-01447

The PTAB found claims 1 and 2 unpatentable over the combination of Bowen and Parkin's prior art references. The Board concluded that combining these references taught all elements of the challenged claims, including a rationale for using amorphous, annealed CoFeB electrodes to achieve high TMR. Claims 3 and 4 were not found unpatentable.

patent instituted

Monolithic Power Systems, Inc. v.Greenthread, LLC

· IPR2024-00553

Monolithic Power Systems challenged Greenthread's patent on obviousness (35 U.S.C. § 103) in a semiconductor device context. The Petitioner successfully argued that the claimed graded dopant profiles were rendered obvious by combinations of prior art references, leading to institution.

patent null

Monolithic Power Systems, Inc. v.Greenthread, LLC

· IPR2024-00468

Monolithic Power Systems challenges Greenthread's semiconductor patent (8421195) before the PTAB, asserting that the claimed CMOS device improvements are obvious. The petitioner relies on multiple prior art references, including Onoda and Kawagoe, to demonstrate a lack of inventive step in creating electric drift fields via graded dopant concentration.

patent null

Monolithic Power Systems, Inc. v.Greenthread, LLC

· IPR2024-00469

Monolithic Power Systems challenged U.S. Patent No. 9,190,502 regarding semiconductor device claims (7 and 8) in an IPR proceeding. The Petitioner argues that the claimed graded dopant profiles and electric drift fields are obvious over prior art references like Onoda and Kawagoe. The Board has instituted the case for trial, finding the evidence compelling enough to proceed with the challenge.

patent null

Monolithic Power Systems, Inc. v.Greenthread, LLC

· IPR2024-00470

Monolithic Power Systems, Inc. initiated an IPR challenging Claim 44 of Greenthread's U.S. Patent No. 11,121,222 under 35 U.S.C. §103. The petition asserts that the claimed CMOS semiconductor fabrication structure is obvious based on prior art references including Onoda and Kawagoe.

patent null

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00788

Micron Technology, Inc. filed an IPR challenging Yangtze Memory Technologies Company's 3D NAND Flash Memory patent (10658378). The petition asserts that the claimed features are obvious in light of prior art references like Toyama and Mushiga.

patent null

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00790

Micron Technology filed a Petition challenging the validity of Yangtze Memory Technologies' '031 Patent, arguing that key claims are obvious over prior art references Kim and Tessariol. The petition focuses on 3D NAND memory structures, specifically multi-stack staircase designs and etch profiles. Micron asserts that the combination of teachings from these references renders the claimed features predictable and non-novel.

patent null

Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.

· IPR2024-00791

Micron Technology filed a Petition challenging claims of Yangtze Memory Technologies' 3D NAND Flash Memory patent (US 10,937,806). The challenge asserts that the claimed features are obvious under Section 103 in light of prior art from Toyama.

patent null

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00793

Micron Technology filed a Petition to institute IPR against Yangtze Memory Technologies regarding 3D NAND Flash Memory claims, arguing the patents are obvious under 35 U.S.C. §103. The petition targets multiple claims based on combinations of prior art references (Seo, Choi, Nam, Izumi).

patent null

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00795

Micron Technology filed an IPR petition against Yangtze Memory Technologies regarding U.S. Patent No. 11,501,822, challenging its validity based on obviousness (35 U.S.C. § 103). The petitioner successfully established a reasonable likelihood of success on the merits and met all procedural requirements for institution.

patent

IKEA Supply AG et al. v.Everlight Electronics Co., Ltd.

· IPR2024-00988

IKEA Supply AG has filed an IPR challenging U.S. Patent No. 7,554,126 held by Everlight Electronics Co., Ltd., asserting that the LED claims are unpatentable. The petition relies heavily on grounds of anticipation and obviousness using multiple prior art references. This challenge targets numerous structural features within light emitting diode technology.

patent null

Texas Instruments Incorporated v.Bell Semiconductor, LLC

· IPR2024-01010

Texas Instruments Incorporated filed an IPR challenging 12 claims of a Bell Semiconductor LLC patent related to Ball Grid Array (BGA) packaging reliability. The petitioner asserts that all claims are unpatentable over prior art by demonstrating predictable modifications using combinations of known semiconductor package designs and stress mitigation techniques.

patent null

Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.

· IPR2024-01198

Hanwha Solutions Corporation has filed a petition challenging Maxeon Solar Pte. Ltd.'s solar cell patent based on obviousness under 35 U.S.C. §103. The petitioner argues that the claimed features, such as FSF doping and gettering, are conventional and render the invention predictable when combined with existing prior art.

patent Final Written Decision

Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd.

· IPR2024-01199

The PTAB issued a Final Written Decision finding all 20 challenged claims unpatentable based on obviousness (103). The Petitioner successfully demonstrated that various combinations of prior art—including Froitzheim, Gan, Smith, and Li—would render the Maxeon patent obvious to a person skilled in the art.

patent final

Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.

· IPR2024-01198

The PTAB issued a final written decision denying Petitioner's challenge to claims 10-20 of Maxeon Solar Pte. Ltd.'s patent. The Board construed the key term 'metal impurities' as 'unintentional foreign metals,' rejecting arguments that intentional dopants qualified. Ultimately, the Petitioner failed to demonstrate unpatentability by a preponderance of the evidence.

patent Final Written Decision

Reed Semiconductor Corporation v.Monolithic Power Systems, Inc.

· IPR2024-01158

The PTAB issued a Final Written Decision finding multiple independent and dependent claims unpatentable. The grounds were anticipation (35 U.S.C. § 102) and obviousness (35 U.S.C. § 103), based on the prior art reference Tateishi.

patent final

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00909

The PTAB found claims 1-7 and 18 unpatentable over the prior art reference Toyama under 35 U.S.C. § 103. The Board issued a Final Written Decision after addressing several key claim construction disputes regarding isolation regions, dielectric structures, and local contacts.

patent Final Written Decision

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00795

The PTAB issued a Final Written Decision finding that the patent claims were unpatentable over combinations of prior art references. Specifically, the Petitioner successfully demonstrated obviousness against Zhao and Lee, leading to the rejection of nearly all challenged claims.

patent final

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00792

The PTAB issued a Final Written Decision denying the petitioner's arguments that claims 1-6 of patent 11468957 were unpatentable. The Board found the anticipation argument failed because Suzuki did not disclose a distinct 'pre-verify stage,' and obviousness arguments failed due to insufficient establishment of required elements over prior art combinations.

patent Final Written Decision

Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.

· IPR2024-00791

The PTAB issued a Final Written Decision denying the Petitioner's challenge to four claims related to 3D memory devices. The Board found that the Petitioner failed to establish obviousness over prior art references, specifically Toyama.

patent Final Written Decision

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00790

The PTAB issued a Final Written Decision finding claims 1-3 unpatentable over Kim due to obviousness (103), while claims 4 and 5 were found patentable. The Board construed the key term 'surrounding' as meaning 'all around' or 'encircling.'

patent instituted

Canadian Solar Inc et al. v.Maxeon Solar Pte. Ltd.

· IPR2024-01039

Canadian Solar Inc.'s IPR petition against Maxeon Solar Pte. Ltd. was instituted by the PTAB, finding a reasonable likelihood of success on grounds of obviousness (35 U.S.C. § 103). The Board determined that Petitioner presented sufficient evidence to support its arguments regarding prior art combinations in solar cell technology.

patent denied

IKEA Supply AG et al. v.Everlight Electronics Co., Ltd.

· IPR2024-00988

The PTAB denied institution for an IPR petition challenging claims in a semiconductor device patent, citing failure to meet the particularity requirement under 35 U.S.C. § 312(a)(3). The Board found that several grounds were voluminous and excessive, particularly those involving complex prior art combinations.

patent instituted

IKEA Supply AG et al. v.Everlight Electronics Co., Ltd.

· IPR2024-00987

IKEA Supply AG successfully petitioned to institute an IPR against Everlight Electronics Co., Ltd.'s patent for LED carrier leadframes. The Board found a reasonable likelihood of unpatentability based on anticipation and obviousness grounds (102/103).

patent denied

Innoscience America, Inc. et al. v.Infineon Technologies Austria AG

· IPR2024-00975

The PTAB denied the institution of an IPR against Infineon's patent, finding that Innoscience failed to demonstrate a reasonable likelihood of prevailing on obviousness grounds.

patent instituted

IKEA Supply AG et al. v.Everlight Electronics Co., Ltd.

· IPR2024-00972

IKEA Supply AG successfully convinced the PTAB to institute an IPR against Everlight Electronics Co., Ltd.'s patent 9640733. The Board found a reasonable likelihood of success on multiple grounds, including anticipation and obviousness based on prior art references like Kishikawa and Nakashima. This sets the stage for a full trial focusing on LED packaging technology.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00911

Micron Technology successfully petitioned to institute IPR proceedings against Yangtze Memory Technologies regarding claims related to 3D NAND memory technology. The Board found a reasonable likelihood of unpatentability for claim 10 based on Toyama's First Exemplary Structure, moving the case toward trial preparation.

patent instituted

Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.

· IPR2024-00909

Micron Technology, Inc. successfully convinced the PTAB that Yangtze Memory Technologies Company, Ltd.'s semiconductor patent was obvious over prior art reference Toyama et al., leading to institution of the IPR. The Board found Petitioner demonstrated a reasonable likelihood of prevailing on all 8 claims at issue based on structural limitations taught by the prior art.

patent denied

Reed Semiconductor Corporation v.Monolithic Power Systems, Inc.

· IPR2024-00871

The PTAB denied institution for Reed Semiconductor Corporation's IPR against Monolithic Power Systems, Inc., finding Petitioner failed to adequately map claims onto prior art references. The denial was based on insufficient explanation regarding specific functional limitations in the voltage converter technology.

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