Semiconductor devices — US PTAB Patent Cases
143 decisions indexed
Page 3 of 5 · 143 total
Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies Company successfully convinced the PTAB to institute proceedings against Micron Technology for patent infringement. The Board found that Petitioner showed a reasonable likelihood of prevailing on at least one claim, despite arguments regarding foreign state actor status and RPI issues.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging all 14 claims of Yangtze Memory’s ESD bus patent, arguing obviousness over Yoshinaga, Saint, and Haralabidis and asserting no discretionary denial grounds.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
The PTAB granted institution of IPR for Innoscience America against Infineon Technologies, challenging 16 claims related to merged cascode transistors. The Board found a reasonable likelihood of unpatentability based on prior art combinations.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR challenge against Yangtze Memory Technologies regarding 3D memory structures was denied by the PTAB. The Board found that Micron failed to demonstrate a reasonable likelihood of success on its obviousness grounds over prior art combinations.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned to challenge key claims in a semiconductor memory patent held by Yangtze Memory Technologies, leading to institution at the PTAB. The Board focused on obviousness (103) over Nakajima, balancing technical merits with parallel litigation factors.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology filed an IPR petition against Yangtze Memory Technologies regarding U.S. Patent No. 11,501,822, challenging its validity based on obviousness (35 U.S.C. § 103). The petitioner successfully established a reasonable likelihood of success on the merits and met all procedural requirements for institution.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution in a PTAB proceeding against Yangtze Memory Technologies regarding non-volatile memory technology. The Board found sufficient evidence to proceed on multiple grounds of obviousness over prior art references Lee, Zhao, and Yang.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that the patent claims were unpatentable over combinations of prior art references. Specifically, the Petitioner successfully demonstrated obviousness against Zhao and Lee, leading to the rejection of nearly all challenged claims.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
Innoscience America petitions the PTAB to institute an IPR against Infineon's 9,070,755 transistor patent, seeking cancellation of all 14 claims on the basis of anticipation and obviousness over Fujishima and related prior art. The petition argues that discretionary denial is improper and requests the Board find the claims unpatentable.
Innoscience America, Inc. et al. v.Infineon Technologies Americas Corp.
The PTAB denied Innoscience America's petition to institute IPR against Infineon Technologies regarding patent 9070755. The Board found that factors favoring discretionary denial, such as overlap with a parallel ITC investigation, outweighed arguments for institution.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments (Petitioner) filed an opening petition challenging U.S. Patent No. 11,316,014 for obviousness under 35 U.S.C. § 103. The challenge targets numerous claims related to CMOS/VLSI fabrication and memory technology using various prior art combinations.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments challenged Greenthread's '502 patent, arguing that claims related to CMOS/Flash Memory Fabrication are unpatentable under 102 and 103. The petition relies on prior art references like Onoda and Payne to demonstrate anticipation and obviousness in semiconductor device technology.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments Incorporated filed a petition challenging U.S. Patent No. 8,421,195 regarding CMOS fabrication/doping profiles. The petitioner asserts that the claims are anticipated or obvious based on numerous prior art references including Onoda and Payne. This challenges the patent's validity in semiconductor device technology.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung has filed an IPR petition seeking cancellation of all 19 claims of Harbor Island Dynamic’s ’886 SOI switching circuit patent, alleging anticipation and obviousness over Okashita, Yu, and Burgener. The petition argues that the Board should institute review and that denial is not warranted under Fintiv and §325(d).
Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC
Samsung has filed an IPR petition seeking cancellation of all 55 claims of SiOnyx’s U.S. Patent 11,069,737 covering textured‑layer image sensors. The petition relies on five prior‑art references to argue anticipation and obviousness under §§ 102 and 103 and asks the Board not to deny institution.
Samsung Electronics Co., Ltd. et al. v.SiOnyx, LLC
Samsung Electronics Co., Ltd. successfully petitioned for institution in its IPR against SiOnyx, LLC's patent (US 11069737). The Board found a reasonable likelihood of prevailing on the merits against both Haddad138 and Yap regarding image sensor technology claims.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung Electronics successfully petitioned the PTAB against Harbor Island Dynamic's patent, leading to an institution decision. The Board found a reasonable likelihood of anticipation for claim 1 based on Okashita prior art and determined that combining structures would render other claims obvious.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
The PTAB issued a Final Written Decision finding all 18 challenged claims unpatentable by a preponderance of the evidence. The Petitioner successfully demonstrated anticipation under § 102 and obviousness under § 103, primarily using prior art reference Cooney.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
The Board issued a final decision finding that all challenged claims (19) were unpatentable. Petitioner successfully argued obviousness and anticipation based on combining prior art references in the field of SOI switching circuits.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung seeks IPR institution to invalidate Harbor Island Dynamic’s 7,772,673 patent covering deep‑trench isolation with chamfered corners, arguing the claims are obvious or anticipated by prior art such as Yin, Koshimizu, and Norström.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung Electronics successfully secured institution at the PTAB for its IPR against Harbor Island Dynamic's patent 9245826. The Board found a reasonable likelihood of prevailing on multiple claims based on anticipation and obviousness grounds. This decision sets the stage for a full trial regarding semiconductor device technology.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies, Inc. failed its IPR challenge against a patent owned by Godo Kaisha IP Bridge 1 regarding Magnetic Tunnel Junctions (MTJ). The PTAB denied the petition on obviousness grounds (103), finding that the petitioner could not establish a reasonable likelihood of prevailing.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
The PTAB found claims 1 and 2 unpatentable over the combination of Bowen and Parkin's prior art references. The Board concluded that combining these references taught all elements of the challenged claims, including a rationale for using amorphous, annealed CoFeB electrodes to achieve high TMR. Claims 3 and 4 were not found unpatentable.
BOE Technology Group Co., LTD v.Optronic Sciences, LLC
BOE Technology Group Co., LTD successfully petitioned to institute an IPR against Optronic Sciences, LLC's patent 8158477. The Board found a reasonable likelihood of prevailing on obviousness grounds over multiple prior art references.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.
Hanwha Solutions Corporation has filed a petition challenging Maxeon Solar Pte. Ltd.'s solar cell patent based on obviousness under 35 U.S.C. §103. The petitioner argues that the claimed features, such as FSF doping and gettering, are conventional and render the invention predictable when combined with existing prior art.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd.
The PTAB issued a Final Written Decision finding all 20 challenged claims unpatentable based on obviousness (103). The Petitioner successfully demonstrated that various combinations of prior art—including Froitzheim, Gan, Smith, and Li—would render the Maxeon patent obvious to a person skilled in the art.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.
The PTAB issued a final written decision denying Petitioner's challenge to claims 10-20 of Maxeon Solar Pte. Ltd.'s patent. The Board construed the key term 'metal impurities' as 'unintentional foreign metals,' rejecting arguments that intentional dopants qualified. Ultimately, the Petitioner failed to demonstrate unpatentability by a preponderance of the evidence.
Aptiv Services US, LLC et al. v.Microchip Technology, Inc.
Aptiv Services challenged Microchip Technology's patent (9471074) in an IPR, arguing obviousness over Al-Shyoukh in view of Ivanov and Stanescu. The PTAB institution decision granted the petition, proceeding to trial on 18 claims.
Reed Semiconductor Corporation v.Monolithic Power Systems, Inc.
The PTAB issued a Final Written Decision finding multiple independent and dependent claims unpatentable. The grounds were anticipation (35 U.S.C. § 102) and obviousness (35 U.S.C. § 103), based on the prior art reference Tateishi.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron's second IPR petition against Yangtze Memory's 3D memory patent (10,879,254), citing the overlap of asserted prior art knowledge with a previously instituted review.
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