Semiconductor memory — US PTAB Patent Cases
103 decisions indexed
Page 4 of 4 · 103 total
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review of the PTAB’s decision on its 3D memory patent is contested. The Board found no error in rejecting Micron’s obviousness arguments based on Toyama, and the response urges denial of the review request.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron's petitions for Director Review of the final written decisions in three IPRs, including the case involving Yangtze Memory's patent 11,468,957. The Board’s original findings remain in effect.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology seeks Director Review of the PTAB’s final written decision that held claims 1‑6 of its 3D‑NAND memory patent unpatentable. The petition argues the Board relied on unsupported expert testimony and misapplied the non‑obviousness analysis to prior art references Hongtao and Seo.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review challenges the PTAB’s rejection of its obviousness arguments against Yangtze Memory’s NAND flash verification patent. The Board found Micron’s evidence insufficient and its arguments conclusory, leading to a denial of the review request.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology seeks Director Review of the PTAB’s decision that claim 4 of its 3‑D NAND patent remains unpatentable. The petition argues the Board misapplied obviousness law, ignoring KSR precedent and the known‑substitute teaching of Kim and Tessariol.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review of the PTAB’s decision on claim 4 of Yangtze Memory’s 3D memory patent was denied. The Board affirmed that Micron failed to demonstrate a motivation or benefit for the alleged modification.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The USPTO denied Micron Technology’s request for Director Review of the Final Written Decision in IPR2024-00790, leaving the prior decision on patent 10,868,031 intact.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics has filed a post‑grant review petition seeking cancellation of Vervain’s 11,830,546 NAND‑flash memory patent. The petition alleges lack of patent‑eligible subject matter, insufficient written description, indefiniteness, and obviousness over prior art. The Board must decide whether to institute the review.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics has filed an IPR petition seeking to invalidate all 15 claims of Vervain’s ’385 patent on the basis that the hybrid SLC‑MLC flash architecture and its wear‑leveling features are obvious over prior art such as Gavens, Moshayedi and Sutardja.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron’s request for Director Review of the PTAB’s decision on a 3‑D memory patent was denied. The Board’s findings that the petitioner’s proposed modifications were inoperable and lacked motivation were upheld.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron Technology petitions the PTAB Director to review a final written decision that upheld Yangtze Memory’s 3D NAND flash patent claims. Micron contends the Board erred on obviousness grounds by demanding bodily incorporation, ignoring reply‑stage evidence, and misapplying anticipation standards. The request seeks reversal or vacatur of the decision.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
The USPTO denied Micron Technology’s request for Director Review of the Final Written Decision in IPR2024-00791 (and the related IPR2024-00911). The order contains no substantive patentability findings.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging all 20 claims of YMTC’s 3D NAND patent, arguing obviousness over Nishikawa, Lu, and Nishikawa2 references and asserting no discretionary denial factors.
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