Semiconductor memory — US PTAB Patent Cases
64 decisions indexed
Page 3 of 3 · 64 total
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron’s request for Director Review of the PTAB’s decision on a 3‑D memory patent was denied. The Board’s findings that the petitioner’s proposed modifications were inoperable and lacked motivation were upheld.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron Technology petitions the PTAB Director to review a final written decision that upheld Yangtze Memory’s 3D NAND flash patent claims. Micron contends the Board erred on obviousness grounds by demanding bodily incorporation, ignoring reply‑stage evidence, and misapplying anticipation standards. The request seeks reversal or vacatur of the decision.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
The USPTO denied Micron Technology’s request for Director Review of the Final Written Decision in IPR2024-00791 (and the related IPR2024-00911). The order contains no substantive patentability findings.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging all 20 claims of YMTC’s 3D NAND patent, arguing obviousness over Nishikawa, Lu, and Nishikawa2 references and asserting no discretionary denial factors.
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