Semiconductor memory — US PTAB Patent Cases
103 decisions indexed
Page 3 of 4 · 103 total
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition against Yangtze Memory’s 3D NAND patent, asserting that the claims are obvious over the Costa reference and requesting the Board to institute the review.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology has filed an IPR petition challenging all 19 claims of Yangtze Memory’s 3D NAND word‑line contact patent. The petition asserts obviousness over Kim, Park, and Fang references and argues there are no discretionary grounds to deny institution.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron seeks Director Review of the PTAB’s final decision upholding claims 2‑5 and 7‑11 of its 3D NAND patent. The petitioner argues the Board misapplied obviousness standards, especially regarding the Park and Shibata references. A reversal could invalidate the Board’s findings and affect Micron’s memory‑technology portfolio.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron's request for director review of the PTAB's decision on its 3D NAND patent was denied. The Board affirmed that Micron failed to meet the burden of proving obviousness or motivation to combine prior art references.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition targeting YMTC’s 3D NAND ‘276 patent, asserting that all 18 claims are obvious over Kim, Fang, Han, and Chen. The petition argues no discretionary denial applies and seeks institution.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging 15 claims of Yangtze Memory’s 3D NAND ‘838 patent, arguing they are obvious over several prior‑art references and that the Board should not exercise discretionary denial.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has petitioned the PTAB to invalidate 12 claims of Yangtze Memory’s 3D NAND ‘941 patent, asserting anticipation and obviousness over the Dong publication and combinations with Costa and Shirai. The petition seeks institution and argues no discretionary denial is warranted.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics has petitioned the PTAB for inter‑partes review of Vervain’s 8,891,298 patent covering a hybrid NAND flash memory system. The petition asserts that all 11 claims are obvious under 35 U.S.C. § 103 in view of multiple prior‑art references. The Board must decide whether to institute the proceeding.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging Yangtze Memory’s 3D NAND ‘666 patent, asserting that claims 17, 19, and 20 are obvious over multiple prior‑art references. The petition seeks institution and cancellation of the claims.
YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies (YMTC) filed an authorized response to Micron’s Director Review request, arguing the PTAB correctly upheld YMTC’s eligibility to pursue IPRs and rejected Micron’s Return Mail arguments. The Board is urged to deny Micron’s request for discretionary denial.
Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.
Micron has filed a Request for Director Review seeking to overturn the Board’s decision to institute an IPR against YMTC, arguing the Chinese state‑owned firm is not a “person” under 35 U.S.C. §311 and that the Board should have exercised discretionary denial under §314(a).
Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.
Micron’s request to overturn the institution of an IPR against Yangtze Memory Technologies was denied. The Board affirmed YMTC’s eligibility as a petitioner and found no RPI issues or grounds for discretionary denial.
Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies has filed an IPR petition against Micron’s 8,945,996 patent covering 3D NAND memory fabrication, asserting anticipation and obviousness over four prior‑art references and arguing that PTAB discretion does not apply.
YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies has filed an IPR petition challenging Micron's 3D NAND patent (US 10,872,903). The petition asserts anticipation and obviousness over Ahn, Ishikawa, and Fukuzumi prior art and argues that the Board should not exercise discretionary exclusions.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Yangtze Memory Technologies seeks Director Review of the PTAB’s decision to institute an IPR against Micron’s 3D NAND patent, arguing the Board relied on unsupported expert testimony and failed to deny institution despite weak merits.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging Yangtze Memory’s 3D NAND ‘604 patent, asserting obviousness over Thimmegowda combined with Lee and Kobayashi. The petition seeks institution and argues no discretionary denial applies.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB held claims 1, 10‑13, and 21 of Netlist’s ’035 memory‑module patent unpatentable as obvious over Osanai and Tokuhiro, while claims 2, 6, and 22 remained valid.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB denied Micron's request for rehearing of its petition to institute an IPR against Netlist's memory‑controller patent, finding that Micron introduced arguments not present in the original petition.
Micron Technology, Inc. et al. v.Netlist, Inc.
Micron’s petition to invalidate Netlist’s memory‑module patent was denied by the PTAB because the petitioner could not demonstrate a reasonable likelihood of success on any of the five challenged claims.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB denied Micron's petition to join the Samsung IPR, ruling that the challenges were substantively identical to existing filings. The Board applied General Plastic factors, finding no reasonable likelihood of prevailing and denying institution based on prior filing history and potential road-mapping concerns.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics petitions the PTAB to invalidate Vervain’s ‘546 NAND‑flash patent, asserting abstract‑idea, lack of written description, indefiniteness, and obviousness grounds. The petition relies on extensive expert declaration and prior‑art references. The Board has yet to decide whether to institute the review.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Micron has petitioned the PTAB to invalidate Vervain’s 10,950,300 flash‑memory patent, asserting that all twelve claims are obvious over prior‑art references Dusija and Sutardja.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics has filed a post‑grant review petition seeking cancellation of all seven claims of Vervain’s ‘612 NAND flash memory patent, alleging lack of written description, indefiniteness, and obviousness. The petition relies on extensive prior‑art patents and technical literature covering hybrid SLC‑MLC flash systems.
Phison Electronics Corporation v.Vervain, LLC.
Micron (as petitioner) seeks IPR of U.S. Patent 10,950,300 covering flash memory systems with MLC/SLC cells, arguing the claims are obvious over Dusija and Sutardja. The petition emphasizes early filing and favorable Fintiv factors to secure institution.
Phison Electronics Corporation v.Vervain, LLC.
Phison Electronics Corp. has filed a post‑grant review petition seeking cancellation of Vervain’s ‘546 NAND flash memory patent. The petition alleges lack of patent‑eligible subject matter, insufficient written description, indefiniteness, and obviousness over extensive prior art.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has filed an IPR petition challenging 18 claims of YMTC’s 3D NAND ‘254 patent, asserting that the Fujiki publication renders the claims obvious under §103 and that no discretionary denial applies.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics has petitioned the PTAB to invalidate all ten claims of Vervain’s ‘240 NAND‑flash patent, asserting that the claims are obvious over multiple prior‑art references. The petition cites Gavens, Moshayedi and Sutardja patents and argues that pending district‑court suits do not bar institution.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s IPR against Yangtze Memory’s 3D NAND patent was instituted, with the Board finding a reasonable likelihood of success on obviousness over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron seeks Director Review of a PTAB decision that left its 3D NAND flash patent claims unchallenged. The petition argues the Board misapplied obviousness standards and ignored reply evidence. A reversal could affect the enforceability of claims 8 and 10 of U.S. Patent 10,937,806.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The USPTO denied Micron Technology’s request for Director Review of the Final Written Decision in two IPRs concerning patent 10,937,806. The denial leaves the patent owner’s rights intact.
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