Semiconductor memory — US PTAB Patent Cases
64 decisions indexed
Page 2 of 3 · 64 total
Phison Electronics Corporation v.Vervain, LLC
The PTAB denied Phison’s petition to institute a post‑grant review of Vervain’s NAND‑flash storage patent, finding the challenger failed to show any claim was likely unpatentable.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics Corp. petitions the PTAB to invalidate Vervain’s ‘370 hybrid NAND‑flash patent, asserting lack of written description, indefiniteness, and obviousness over prior art. The petition targets claims 1‑18 and seeks cancellation under §§ 112(a), 112(b), 103 and 101. Institution of the review is pending.
Phison Electronics Corporation v.Vervain, LLC
Micron (on behalf of Phison) petitions the PTAB to invalidate 12 claims of Vervain’s 10,950,300 flash‑memory patent, arguing they are obvious over Dusija and Sutardja. The petition also argues against discretionary denial under § 314(a).
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics Corp. has filed a post‑grant review petition seeking cancellation of ten claims of Vervain’s ‘369 NAND‑flash patent, alleging abstractness, lack of written description, indefiniteness, and obviousness over prior art.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron seeks Director Review of the PTAB’s final decision upholding claims 2‑5 and 7‑11 of its 3D NAND patent. The petitioner argues the Board misapplied obviousness standards, especially regarding the Park and Shibata references. A reversal could invalidate the Board’s findings and affect Micron’s memory‑technology portfolio.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron's request for director review of the PTAB's decision on its 3D NAND patent was denied. The Board affirmed that Micron failed to meet the burden of proving obviousness or motivation to combine prior art references.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron has petitioned the PTAB to invalidate 12 claims of Yangtze Memory’s 3D NAND ‘941 patent, asserting anticipation and obviousness over the Dong publication and combinations with Costa and Shirai. The petition seeks institution and argues no discretionary denial is warranted.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics has petitioned the PTAB for inter‑partes review of Vervain’s 8,891,298 patent covering a hybrid NAND flash memory system. The petition asserts that all 11 claims are obvious under 35 U.S.C. § 103 in view of multiple prior‑art references. The Board must decide whether to institute the proceeding.
YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies (YMTC) filed an authorized response to Micron’s Director Review request, arguing the PTAB correctly upheld YMTC’s eligibility to pursue IPRs and rejected Micron’s Return Mail arguments. The Board is urged to deny Micron’s request for discretionary denial.
Yangtze Memory Technologies Company, Ltd. v.Micron Technology, Inc. et al.
Micron has filed a Request for Director Review seeking to overturn the Board’s decision to institute an IPR against YMTC, arguing the Chinese state‑owned firm is not a “person” under 35 U.S.C. §311 and that the Board should have exercised discretionary denial under §314(a).
YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD. v.Micron Technology, Inc. et al.
Yangtze Memory Technologies has filed an IPR petition challenging Micron's 3D NAND patent (US 10,872,903). The petition asserts anticipation and obviousness over Ahn, Ishikawa, and Fukuzumi prior art and argues that the Board should not exercise discretionary exclusions.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB held claims 1, 10‑13, and 21 of Netlist’s ’035 memory‑module patent unpatentable as obvious over Osanai and Tokuhiro, while claims 2, 6, and 22 remained valid.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB denied Micron's request for rehearing of its petition to institute an IPR against Netlist's memory‑controller patent, finding that Micron introduced arguments not present in the original petition.
Micron Technology, Inc. et al. v.Netlist, Inc.
Micron’s petition to invalidate Netlist’s memory‑module patent was denied by the PTAB because the petitioner could not demonstrate a reasonable likelihood of success on any of the five challenged claims.
Micron Technology, Inc. et al. v.Netlist, Inc.
The PTAB denied Micron's petition to join the Samsung IPR, ruling that the challenges were substantively identical to existing filings. The Board applied General Plastic factors, finding no reasonable likelihood of prevailing and denying institution based on prior filing history and potential road-mapping concerns.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics petitions the PTAB to invalidate Vervain’s ‘546 NAND‑flash patent, asserting abstract‑idea, lack of written description, indefiniteness, and obviousness grounds. The petition relies on extensive expert declaration and prior‑art references. The Board has yet to decide whether to institute the review.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Micron has petitioned the PTAB to invalidate Vervain’s 10,950,300 flash‑memory patent, asserting that all twelve claims are obvious over prior‑art references Dusija and Sutardja.
PHISON ELECTRONICS CORPORATION v.Vervain, LLC
Phison Electronics has filed a post‑grant review petition seeking cancellation of all seven claims of Vervain’s ‘612 NAND flash memory patent, alleging lack of written description, indefiniteness, and obviousness. The petition relies on extensive prior‑art patents and technical literature covering hybrid SLC‑MLC flash systems.
Phison Electronics Corporation v.Vervain, LLC.
Micron (as petitioner) seeks IPR of U.S. Patent 10,950,300 covering flash memory systems with MLC/SLC cells, arguing the claims are obvious over Dusija and Sutardja. The petition emphasizes early filing and favorable Fintiv factors to secure institution.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics has petitioned the PTAB to invalidate all ten claims of Vervain’s ‘240 NAND‑flash patent, asserting that the claims are obvious over multiple prior‑art references. The petition cites Gavens, Moshayedi and Sutardja patents and argues that pending district‑court suits do not bar institution.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s IPR against Yangtze Memory’s 3D NAND patent was instituted, with the Board finding a reasonable likelihood of success on obviousness over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron seeks Director Review of a PTAB decision that left its 3D NAND flash patent claims unchallenged. The petition argues the Board misapplied obviousness standards and ignored reply evidence. A reversal could affect the enforceability of claims 8 and 10 of U.S. Patent 10,937,806.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The USPTO denied Micron Technology’s request for Director Review of the Final Written Decision in two IPRs concerning patent 10,937,806. The denial leaves the patent owner’s rights intact.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review of the PTAB’s decision on its 3D memory patent is contested. The Board found no error in rejecting Micron’s obviousness arguments based on Toyama, and the response urges denial of the review request.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron's petitions for Director Review of the final written decisions in three IPRs, including the case involving Yangtze Memory's patent 11,468,957. The Board’s original findings remain in effect.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology seeks Director Review of the PTAB’s final written decision that held claims 1‑6 of its 3D‑NAND memory patent unpatentable. The petition argues the Board relied on unsupported expert testimony and misapplied the non‑obviousness analysis to prior art references Hongtao and Seo.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review challenges the PTAB’s rejection of its obviousness arguments against Yangtze Memory’s NAND flash verification patent. The Board found Micron’s evidence insufficient and its arguments conclusory, leading to a denial of the review request.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology seeks Director Review of the PTAB’s decision that claim 4 of its 3‑D NAND patent remains unpatentable. The petition argues the Board misapplied obviousness law, ignoring KSR precedent and the known‑substitute teaching of Kim and Tessariol.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s request for Director Review of the PTAB’s decision on claim 4 of Yangtze Memory’s 3D memory patent was denied. The Board affirmed that Micron failed to demonstrate a motivation or benefit for the alleged modification.
Phison Electronics Corporation v.Vervain, LLC
Phison Electronics has filed a post‑grant review petition seeking cancellation of Vervain’s 11,830,546 NAND‑flash memory patent. The petition alleges lack of patent‑eligible subject matter, insufficient written description, indefiniteness, and obviousness over prior art. The Board must decide whether to institute the review.
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