KIMBERLY McGRAW
64 IP cases indexed. Covers patent matters.
Cases Presided Over
64 cases indexed | Page 1 of 3
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s IPR against Yangtze Memory’s 3D NAND patent was instituted, with the Board finding a reasonable likelihood of success on obviousness over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB has instituted an inter partes review of claim 10 of Micron’s challenged 3D NAND patent, finding a reasonable likelihood of unpatentability over the Toyama reference.
Aputure Imaging Industries Co., Ltd. v.--
Aputure Imaging and Rotolight settled their dispute over four USPTO patents, leading the Board to terminate four IPRs before any merits were decided and to keep the settlement confidential.
Aputure Imaging Industries Co., Ltd. v.--
Aputure Imaging and Rotolight settled their dispute over four patents, leading the PTAB to terminate the IPRs and keep the settlement confidential.
Aputure Imaging Industries Co., Ltd. v.--
Aputure Imaging and Rotolight settled their IPR disputes covering four patents, leading the PTAB to terminate the proceedings and keep the settlement confidential.
Aputure Imaging Industries Co., Ltd. v.--
Aputure Imaging and Rotolight settled their dispute over four patents, leading the PTAB to terminate four IPRs before any merits were decided and to keep the settlement confidential.
Shenzhen Fbtech Electronics Ltd. et al. v.LithiumHub Technologies, LLC et al.
Shenzhen FBTech and LiTime settled their IPR challenge to LithiumHub's patent 9,412,994, leading the PTAB to terminate the proceeding before trial and keep the settlement confidential.
Shenzhen Fbtech Electronics Ltd. et al. v.LithiumHub Technologies, LLC
Shenzhen FBTech and LiTime settled their IPR against LithiumHub's battery‑technology patent before trial, prompting the PTAB to terminate the proceeding and keep the settlement confidential.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron successfully established the unpatentability of five claims (15, 16, 17, 19, and 20) over prior art references Toyama, Mushiga, and Makala. The Board found that various embodiments in the prior art taught all limitations of the challenged claims.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB found claims 1–6 and 11–13 unpatentable over Tessariol, while finding them patentable over Park. The Board's decision hinged on claim construction, specifically defining 'dummy source structure' as one that does not function as a source to memory cells. This outcome significantly impacts the validity of the asserted claims in 3D Memory Devices (NAND).
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding claims 1-3 unpatentable over Kim due to obviousness (103), while claims 4 and 5 were found patentable. The Board construed the key term 'surrounding' as meaning 'all around' or 'encircling.'
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
The PTAB issued a Final Written Decision denying the Petitioner's challenge to four claims related to 3D memory devices. The Board found that the Petitioner failed to establish obviousness over prior art references, specifically Toyama.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision denying the petitioner's arguments that claims 1-6 of patent 11468957 were unpatentable. The Board found the anticipation argument failed because Suzuki did not disclose a distinct 'pre-verify stage,' and obviousness arguments failed due to insufficient establishment of required elements over prior art combinations.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that the patent claims were unpatentable over combinations of prior art references. Specifically, the Petitioner successfully demonstrated obviousness against Zhao and Lee, leading to the rejection of nearly all challenged claims.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that Claims 1 and 6 were unpatentable over prior art (Park), while the remaining claims were patentable. The Board clarified claim terms like 'formed in the BSG' to encompass both gate-first and gate-last embodiments, rejecting Petitioner’s obviousness arguments based on hindsight bias.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that dependent claim 10 of U.S. Patent No. 10,937,806 was not unpatentable over Toyama. The challenge failed because the Petitioner could not demonstrate obviousness for its base independent claim 8.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB found claims 1-7 and 18 unpatentable over the prior art reference Toyama under 35 U.S.C. § 103. The Board issued a Final Written Decision after addressing several key claim construction disputes regarding isolation regions, dielectric structures, and local contacts.
Next Step Group, Inc. v.Deckers Outdoor Corporation
The PTAB denied institution for Next Step Group's IPR against Deckers Outdoor Corporation regarding the Pull Tab Functional '161 patent. The Board found Petitioner failed to demonstrate a reasonable likelihood that the claimed ornamental design was anticipated or obvious over the asserted prior art.
NJOY, LLC et al. v.JUUL Labs, Inc.
The PTAB denied institution of the IPR petition for NJOY against JUUL Labs, finding that Petitioner failed to demonstrate a reasonable likelihood of prevailing on obviousness grounds. The Board found insufficient motivation or reasonable expectation of success in combining various prior art references across multiple claims.
NJOY, Inc. v.JUUL Labs, Inc.
The PTAB denied NJOY's request to challenge JUUL's electronic cigarette patent (RE49114), finding that the Petitioner failed to meet the burden of showing a reasonable likelihood of prevailing on any claim.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution at the PTAB against Yangtze Memory Technologies regarding claims related to 3D memory devices. The Board found sufficient evidence for unpatentability under both §102 and §103 over prior art references Toyama, Mushiga, and Makala.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged Yangtze Memory Technologies' patent claims in a PTAB Institution Decision regarding obviousness over Kim and Tessariol. The Board adopted the Petitioner's definition of 'surrounding' as 'encircling,' finding a reasonable likelihood that Micron will prevail against the patent.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged Yangtze Memory Technologies' patent claims in a PTAB institution decision. The Board adopted a narrow construction of 'dummy source structure,' finding that the Petitioner met its burden for obviousness over Tessariol and Park. This paves the way for further litigation against the patent owner.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron Technology challenged YANGTZE MEMORY TECHNOLOGIES COMPANY over its 3D NAND Memory technology in an IPR proceeding. The PTAB institution decision found a reasonable likelihood of obviousness based on prior art, moving the case into trial preparation.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned the PTAB to challenge Yangtze Memory Technologies' patent claims related to 3D-NAND memory operation, leading to the institution of the IPR. The Board found a reasonable likelihood that Micron would prevail on its challenges regarding anticipation and obviousness over multiple prior art references.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron Technology's request for rehearing after institution was previously denied on claims of the NAND Flash patent 11,600,342. The Board found that Petitioner failed to provide objective evidence demonstrating how prior art references inherently teach fast charge removal.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron Technology's IPR challenge against Yangtze Memory Technologies regarding NAND Flash patents, finding insufficient evidence to prove obviousness over the cited prior art (Seo and Choi).
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution in this IPR against Yangtze Memory Technologies regarding 3D NAND memory claims. The Board found a reasonable likelihood of obviousness over Park et al., despite the Patent Owner's challenges to key claim terms like 'trenches.'
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution in a PTAB proceeding against Yangtze Memory Technologies regarding non-volatile memory technology. The Board found sufficient evidence to proceed on multiple grounds of obviousness over prior art references Lee, Zhao, and Yang.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology, Inc. successfully convinced the PTAB that Yangtze Memory Technologies Company, Ltd.'s semiconductor patent was obvious over prior art reference Toyama et al., leading to institution of the IPR. The Board found Petitioner demonstrated a reasonable likelihood of prevailing on all 8 claims at issue based on structural limitations taught by the prior art.
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