Micron Technology, Inc. et al. v. Yangtze Memory Technologies Company, Ltd.

IPR2025-00294

The PTAB denied Micron's IPR petition against Yangtze Memory because the patent owner had successfully filed a statutory disclaimer covering all challenged claims related to 3D memory devices.

Jurisdiction
US PTAB
Case Number
IPR2025-00294
Judge(s)
JO-ANNE M. KOKOSKI, KIMBERLY McGRAW, MICHAEL T. CYGAN
Decision Date
13 December 2024

Detailed Summary

Micron Technology, Inc. petitioned for an Inter Partes Review (IPR) of U.S. Patent No. 10,886,291, challenging several claims related to joint opening structures in 3D memory devices. However, the Board denied institution because Yangtze Memory Technologies Company, Ltd., the patent owner, had filed a statutory disclaimer under 35 U.S.C. § 253(a). The Board confirmed that this disclaimer was properly recorded on May 9, 2025, thus precluding any review of those claims.

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Micron Technology, Inc. et al. vs Yangtze Memory Technologies Company, Ltd. is valuable context for structuring arguments or assessing risk in similar proceedings.

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Disclaimer: This page contains an automated summary based on publicly available judicial records. The content is generated for informational purposes only and does not constitute legal advice. Always verify details against the original source judgment before relying on this information for any legal purpose. If you believe any information is inaccurate, please contact us.

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