Semiconductors — US PTAB Patent Cases
205 decisions indexed
Page 6 of 7 · 205 total
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Harbor Island Dynamic has filed a Director Review request challenging the PTAB’s decision to institute an IPR against its TSV patent, arguing the Board misapplied discretionary denial factors related to a pending district‑court trial date.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung has filed a Director Review petition challenging the PTAB’s decision to institute an IPR on Harbor Island Dynamic’s semiconductor switching‑circuit patent. The patent owner argues the Board misapplied Fintiv precedent regarding the nearby district‑court trial date.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung has filed a Director Review request challenging the PTAB’s decision to institute an IPR on Harbor Island Dynamic’s semiconductor anchor‑via patent. The owner argues the Board misapplied Fintiv discretionary factors, especially the proximity of a parallel district‑court trial.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung challenges a Director Review request by Harbor Island Dynamic over U.S. Patent 9,245,826. The response argues that the Board’s claim construction and obviousness findings were correct and that no Director Review grounds exist.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies successfully secured institution of its IPR against Godo Kaisha IP Bridge 1 regarding MTJ technology claims. The Board found sufficient evidence to support obviousness under 35 U.S.C. § 103 over combinations of prior art, including Bowen and Sunai.
Silicon Motion Inc. et al. v.K. Mizra LLC
Silicon Motion and patent owner K. Mizra filed a joint request to dismiss their IPR and keep the dismissal agreement confidential. The Board was asked to treat the agreement as business‑confidential information under §317(b).
Silicon Motion Inc. et al. v.K. Mizra LLC
Silicon Motion Inc. challenges K. Mizra LLC's '608 Patent in an IPR proceeding regarding DDR DRAM memory controllers and timing calibration. The petitioner asserts that the patent claims are obvious over combinations of prior art references like Johnson, Stubbs, Moss, and Liou.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies' IPR petition against Godo Kaisha IP Bridge 1 was denied by the PTAB, finding insufficient evidence of obviousness. The Board specifically rejected the argument that substituting CoFeB for Fe would be obvious based on prior art teachings regarding amorphous versus crystalline structures.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies, Inc. failed to convince the PTAB that its claims related to Magnetic Tunnel Junction Devices were unpatentable over various prior art references. The Board denied institution because the petition lacked a reasonable likelihood of prevailing on obviousness grounds (35 U.S.C. § 103).
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies' IPR challenge against Godo Kaisha IP Bridge 1 regarding Magnetic Tunnel Junctions (MTJ) was denied by the PTAB. The Board found that the Petitioner failed to demonstrate a sufficient motivation to combine prior art references, specifically rejecting arguments based on barrier height optimization.
Samsung Electronics Co., Ltd. et al. v.Netlist, Inc.
Samsung files an authorized response opposing Netlist’s request for Director Review of the PTAB’s institution decision on U.S. Patent 11,386,024, arguing procedural waivers and public accessibility of the JEDEC proposal.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd.
Hanwha Solutions Corporation initiated an Inter Partes Review (IPR) challenging Maxeon Solar Pte. Ltd.'s solar cell fabrication patent (8878053). The petitioner argues that the claimed processes are obvious under 35 U.S.C. §103 by combining known elements from prior art references like Froitzheim, Gan, and Smith. The Board noted that discretionary denial was unwarranted due to factors related to multiple petitions.
Hanwha Solutions Corporation v.Maxeon Solar Pte. Ltd. et al.
Hanwha Solutions Corporation successfully petitioned the PTAB to institute an IPR against Maxeon Solar Pte. Ltd.'s solar cell patent (11251315). The Board found a reasonable likelihood of obviousness for claims 10-20 over combinations of prior art references like Choi, Granek, and Marvin.
Aptiv Services US, LLC et al. v.Microchip Technology, Inc.
The PTAB found that the claims of the voltage regulator are unpatentable under § 103 based on a combination of Al-Shyoukh and Ivanov. The Board adopted Petitioner's interpretation of key terms, including finding 'gm enhanced' synonymous with 'gm boost.'
Reed Semiconductor Corporation v.Monolithic Power Systems, Inc.
The PTAB institution decision found a reasonable likelihood of prevailing for the Petitioner in challenging claims related to step-down regulators. The challenge centered on anticipation and obviousness over prior art, specifically regarding pseudo constant on time (PCOT) control circuits.
Texas Instruments Incorporated v.Bell Semiconductor, LLC
NXP USA and Bell Semiconductor jointly moved to terminate IPR2024-00168 after reaching a settlement, and the Board granted the termination while keeping the settlement documents confidential.
FormFactor, Inc. v.Technoprobe S.p.A.
FormFactor and Technoprobe have settled their dispute over U.S. Patent 11,035,885 and jointly moved to terminate the IPR. The Board is asked to dismiss the proceeding under 35 U.S.C. § 317.
Canadian Solar Inc. et al. v.Maxeon Solar Pte. Ltd.
Canadian Solar successfully convinced the PTAB to institute its IPR against Maxeon Solar, challenging claims related to solar cell fabrication. The Board found that Canadian Solar demonstrated a reasonable likelihood of prevailing on multiple obviousness grounds over various prior art combinations. This sets up a high-stakes trial in advanced photovoltaic technology.
Qualcomm Incorporated et al. v.Network System Technologies, LLC
The PTAB granted Qualcomm’s joinder request and instituted inter partes review of Network System Technologies’ NoC patent, covering claims 2,6,9‑16.
NXP USA, INC. et al. v.ParkerVision, Inc.
The PTAB instituted an IPR against ParkerVision’s ’528 mixed‑signal chip patent, covering 30 claims, and granted NXP’s motion to join the parallel TI IPR.
NXP USA, INC. et al. v.ParkerVision, Inc.
The PTAB instituted an IPR against NXP’s challenge to ParkerVision’s ’177 patent, focusing on claim 14, and granted NXP’s motion to join the parallel Texas Instruments IPR.
Samsung Electronics Co., Ltd. et al. v.Staton Techiya, LLC
Samsung Electronics and Staton Techiya have reached a settlement and jointly moved to terminate the IPR over U.S. Patent 11,750,965. The Board is asked to end the proceeding under 35 U.S.C. § 317(a).
IKEA Supply AG et al. v.Everlight Electronics Co., Ltd.
IKEA Supply AG has initiated an IPR challenge against Everlight Electronics Co., Ltd.'s LED packaging patents, arguing that the core 'U-shaped' electrode structure is anticipated and obvious in existing prior art.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB has instituted an inter partes review of claim 10 of Micron’s challenged 3D NAND patent, finding a reasonable likelihood of unpatentability over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that dependent claim 10 of U.S. Patent No. 10,937,806 was not unpatentable over Toyama. The challenge failed because the Petitioner could not demonstrate obviousness for its base independent claim 8.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology, Inc. lost its request for rehearing after the PTAB denied institution of IPR against Yangtze Memory Technologies Company regarding NAND Flash memory patents.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology failed to invalidate Yangtze Memory Technologies' patent on obviousness grounds in a PTAB IPR decision. The Board found that the petitioner could not demonstrate that combining prior art teachings would render the claimed 3D Flash memory invention obvious.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's request for rehearing of the institution denial in its IPR against Yangtze Memory was denied by the PTAB. The Board upheld its construction of key terms, finding no abuse of discretion.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR petition against Yangtze Memory Technologies regarding NAND flash technology was denied by the PTAB. The Board rejected arguments concerning claim scope, specifically finding that 'dummy source structure' must not function as a memory cell source.
CADENCE DESIGN SYSTEMS, INC. v.Semiconductor Design Technologies, LLC
Cadence and Semiconductor Design Technologies have settled their dispute and jointly moved to terminate the IPR covering U.S. Patent 7,603,636, an electronic design automation patent.
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