Semiconductors — US PTAB Patent Cases
137 decisions indexed
Page 4 of 5 · 137 total
Silicon Motion Inc. et al. v.K.Mizra Inc.
Silicon Motion and K.Mizra settled their IPR dispute over patent 10,331,379 before trial, leading the PTAB to terminate the proceeding and keep the settlement confidential.
Silicon Motion Inc. et al. v.K.Mizra Inc.
Silicon Motion and K.Mizra have settled their dispute over U.S. Patent 10,313,379 and jointly moved to terminate the inter partes review. The Board is expected to grant the termination.
Texas Instruments Incorporated v.Greenthread, LLC
Texas Instruments challenges the validity of a patent covering CMOS device fabrication methods on grounds of obviousness (35 U.S.C. § 103). The petition asserts that the claimed graded dopant structures are anticipated or rendered obvious by various prior art combinations, including Kawagoe and Wieczorek.
Micron Technology, Inc. et al. v.Netlist, Inc.
Micron filed a petition for rehearing after the PTAB denied institution of its IPR against Netlist’s ’608 patent. The petitioner asserts the Board missed critical explanations of how the Osanai reference satisfies the claimed data‑path and delay‑circuit limitations.
Micron Technology, Inc. et al. v.Netlist, Inc.
Micron filed a Director Review request challenging the PTAB’s denial to institute its IPR against Netlist’s memory‑interface patent. The petition argues the Board misapplied General Plastic discretionary denial factors to a me‑too petition.
Micron Technology, Inc. et al. v.Netlist, Inc.
The USPTO denied Micron's request for Director Review of the decision that had previously denied institution of its IPR against Netlist's patent. The original institution denial therefore stands.
Micron Technology, Inc. et al. v.Netlist, Inc.
Micron Technology filed a Petition challenging 10268608's claims on grounds of obviousness (103). The petition asserts that the claimed memory module features are anticipated by combinations of prior art, including Hiraishi, Butt, Tokuhiro, Ellsberry, and Kim.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies successfully convinced the PTAB that its claims against Godo Kaisha IP Bridge 1 were non-obvious, leading to the institution of trial on all claims. The Board found a reasonable likelihood of prevailing on Claim 1 based on combinations of Bowen and Sunai prior art.
Samsung Electronics Co., Ltd. et al. v.Harbor Island Dynamic, LLC
Samsung has filed a Director Review petition challenging the PTAB’s decision to institute an IPR on Harbor Island Dynamic’s semiconductor switching‑circuit patent. The patent owner argues the Board misapplied Fintiv precedent regarding the nearby district‑court trial date.
Silicon Motion Inc. et al. v.K. Mizra LLC
Silicon Motion and patent owner K. Mizra filed a joint request to dismiss their IPR and keep the dismissal agreement confidential. The Board was asked to treat the agreement as business‑confidential information under §317(b).
Silicon Motion Inc. et al. v.K. Mizra LLC
Silicon Motion Inc. challenges K. Mizra LLC's '608 Patent in an IPR proceeding regarding DDR DRAM memory controllers and timing calibration. The petitioner asserts that the patent claims are obvious over combinations of prior art references like Johnson, Stubbs, Moss, and Liou.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies' IPR petition against Godo Kaisha IP Bridge 1 was denied by the PTAB, finding insufficient evidence of obviousness. The Board specifically rejected the argument that substituting CoFeB for Fe would be obvious based on prior art teachings regarding amorphous versus crystalline structures.
Western Digital Technologies, Inc. et al. v.Godo Kaisha IP Bridge 1
Western Digital Technologies' IPR challenge against Godo Kaisha IP Bridge 1 regarding Magnetic Tunnel Junctions (MTJ) was denied by the PTAB. The Board found that the Petitioner failed to demonstrate a sufficient motivation to combine prior art references, specifically rejecting arguments based on barrier height optimization.
Samsung Electronics Co., Ltd. et al. v.Netlist, Inc.
Samsung files an authorized response opposing Netlist’s request for Director Review of the PTAB’s institution decision on U.S. Patent 11,386,024, arguing procedural waivers and public accessibility of the JEDEC proposal.
Aptiv Services US, LLC et al. v.Microchip Technology, Inc.
The PTAB found that the claims of the voltage regulator are unpatentable under § 103 based on a combination of Al-Shyoukh and Ivanov. The Board adopted Petitioner's interpretation of key terms, including finding 'gm enhanced' synonymous with 'gm boost.'
Reed Semiconductor Corporation v.Monolithic Power Systems, Inc.
The PTAB institution decision found a reasonable likelihood of prevailing for the Petitioner in challenging claims related to step-down regulators. The challenge centered on anticipation and obviousness over prior art, specifically regarding pseudo constant on time (PCOT) control circuits.
Texas Instruments Incorporated v.Bell Semiconductor, LLC
NXP USA and Bell Semiconductor jointly moved to terminate IPR2024-00168 after reaching a settlement, and the Board granted the termination while keeping the settlement documents confidential.
FormFactor, Inc. v.Technoprobe S.p.A.
FormFactor and Technoprobe have settled their dispute over U.S. Patent 11,035,885 and jointly moved to terminate the IPR. The Board is asked to dismiss the proceeding under 35 U.S.C. § 317.
Canadian Solar Inc. et al. v.Maxeon Solar Pte. Ltd.
Canadian Solar successfully convinced the PTAB to institute its IPR against Maxeon Solar, challenging claims related to solar cell fabrication. The Board found that Canadian Solar demonstrated a reasonable likelihood of prevailing on multiple obviousness grounds over various prior art combinations. This sets up a high-stakes trial in advanced photovoltaic technology.
Qualcomm Incorporated et al. v.Network System Technologies, LLC
The PTAB granted Qualcomm’s joinder request and instituted inter partes review of Network System Technologies’ NoC patent, covering claims 2,6,9‑16.
NXP USA, INC. et al. v.ParkerVision, Inc.
The PTAB instituted an IPR against NXP’s challenge to ParkerVision’s ’177 patent, focusing on claim 14, and granted NXP’s motion to join the parallel Texas Instruments IPR.
Samsung Electronics Co., Ltd. et al. v.Staton Techiya, LLC
Samsung Electronics and Staton Techiya have reached a settlement and jointly moved to terminate the IPR over U.S. Patent 11,750,965. The Board is asked to end the proceeding under 35 U.S.C. § 317(a).
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB has instituted an inter partes review of claim 10 of Micron’s challenged 3D NAND patent, finding a reasonable likelihood of unpatentability over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that dependent claim 10 of U.S. Patent No. 10,937,806 was not unpatentable over Toyama. The challenge failed because the Petitioner could not demonstrate obviousness for its base independent claim 8.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology, Inc. lost its request for rehearing after the PTAB denied institution of IPR against Yangtze Memory Technologies Company regarding NAND Flash memory patents.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology failed to invalidate Yangtze Memory Technologies' patent on obviousness grounds in a PTAB IPR decision. The Board found that the petitioner could not demonstrate that combining prior art teachings would render the claimed 3D Flash memory invention obvious.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's request for rehearing of the institution denial in its IPR against Yangtze Memory was denied by the PTAB. The Board upheld its construction of key terms, finding no abuse of discretion.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR petition against Yangtze Memory Technologies regarding NAND flash technology was denied by the PTAB. The Board rejected arguments concerning claim scope, specifically finding that 'dummy source structure' must not function as a memory cell source.
CADENCE DESIGN SYSTEMS, INC. v.Semiconductor Design Technologies, LLC
Cadence and Semiconductor Design Technologies have settled their dispute and jointly moved to terminate the IPR covering U.S. Patent 7,603,636, an electronic design automation patent.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB has instituted an inter partes review of Micron's challenge to Yangtze Memory’s 3D NAND patent, finding a reasonable likelihood of success on obviousness over the Toyama reference.
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