Jo-Anne M. Kokoski
90 IP cases indexed. Covers patent matters.
Cases Presided Over
90 cases indexed | Page 3 of 3
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron’s IPR against Yangtze Memory’s 3D NAND patent was instituted, with the Board finding a reasonable likelihood of success on obviousness over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned to institute IPR proceedings against Yangtze Memory Technologies regarding claims related to 3D NAND memory technology. The Board found a reasonable likelihood of unpatentability for claim 10 based on Toyama's First Exemplary Structure, moving the case toward trial preparation.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology, Inc. successfully convinced the PTAB that Yangtze Memory Technologies Company, Ltd.'s semiconductor patent was obvious over prior art reference Toyama et al., leading to institution of the IPR. The Board found Petitioner demonstrated a reasonable likelihood of prevailing on all 8 claims at issue based on structural limitations taught by the prior art.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB found claims 1-7 and 18 unpatentable over the prior art reference Toyama under 35 U.S.C. § 103. The Board issued a Final Written Decision after addressing several key claim construction disputes regarding isolation regions, dielectric structures, and local contacts.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding that dependent claim 10 of U.S. Patent No. 10,937,806 was not unpatentable over Toyama. The challenge failed because the Petitioner could not demonstrate obviousness for its base independent claim 8.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology, Inc. lost its request for rehearing after the PTAB denied institution of IPR against Yangtze Memory Technologies Company regarding NAND Flash memory patents.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology failed to invalidate Yangtze Memory Technologies' patent on obviousness grounds in a PTAB IPR decision. The Board found that the petitioner could not demonstrate that combining prior art teachings would render the claimed 3D Flash memory invention obvious.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's request for rehearing of the institution denial in its IPR against Yangtze Memory was denied by the PTAB. The Board upheld its construction of key terms, finding no abuse of discretion.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology's IPR petition against Yangtze Memory Technologies regarding NAND flash technology was denied by the PTAB. The Board rejected arguments concerning claim scope, specifically finding that 'dummy source structure' must not function as a memory cell source.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB has instituted an inter partes review of Micron's challenge to Yangtze Memory’s 3D NAND patent, finding a reasonable likelihood of success on obviousness over the Toyama reference.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully secured institution at the PTAB against Yangtze Memory Technologies regarding claims related to 3D memory devices. The Board found sufficient evidence for unpatentability under both §102 and §103 over prior art references Toyama, Mushiga, and Makala.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron successfully established the unpatentability of five claims (15, 16, 17, 19, and 20) over prior art references Toyama, Mushiga, and Makala. The Board found that various embodiments in the prior art taught all limitations of the challenged claims.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully petitioned the PTAB to challenge Yangtze Memory Technologies' patent claims related to 3D-NAND memory operation, leading to the institution of the IPR. The Board found a reasonable likelihood that Micron would prevail on its challenges regarding anticipation and obviousness over multiple prior art references.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision denying the petitioner's arguments that claims 1-6 of patent 11468957 were unpatentable. The Board found the anticipation argument failed because Suzuki did not disclose a distinct 'pre-verify stage,' and obviousness arguments failed due to insufficient establishment of required elements over prior art combinations.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron Technology's IPR challenge against Yangtze Memory Technologies regarding NAND Flash patents, finding insufficient evidence to prove obviousness over the cited prior art (Seo and Choi).
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB denied Micron Technology's request for rehearing after institution was previously denied on claims of the NAND Flash patent 11,600,342. The Board found that Petitioner failed to provide objective evidence demonstrating how prior art references inherently teach fast charge removal.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged Yangtze Memory Technologies' patent claims in a PTAB institution decision. The Board adopted a narrow construction of 'dummy source structure,' finding that the Petitioner met its burden for obviousness over Tessariol and Park. This paves the way for further litigation against the patent owner.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged Yangtze Memory Technologies' patent claims in a PTAB Institution Decision regarding obviousness over Kim and Tessariol. The Board adopted the Petitioner's definition of 'surrounding' as 'encircling,' finding a reasonable likelihood that Micron will prevail against the patent.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB issued a Final Written Decision finding claims 1-3 unpatentable over Kim due to obviousness (103), while claims 4 and 5 were found patentable. The Board construed the key term 'surrounding' as meaning 'all around' or 'encircling.'
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
The PTAB found claims 1–6 and 11–13 unpatentable over Tessariol, while finding them patentable over Park. The Board's decision hinged on claim construction, specifically defining 'dummy source structure' as one that does not function as a source to memory cells. This outcome significantly impacts the validity of the asserted claims in 3D Memory Devices (NAND).
Solus Advanced Materials Co., Ltd. et al. v.SK nexilis Co., Ltd.
The PTAB denied the IPR petition against claims 1-4 of U.S. Patent No. 9,457,541, finding that the combination of prior art references did not render the copper foil obvious. The Board ruled that the petitioner failed to demonstrate a reasonable expectation of success when combining properties from materially different sources.
Solus Advanced Materials Co., Ltd. et al. v.SK nexilis Co., Ltd.
Solus Advanced Materials Co. lost its request for rehearing after the PTAB denied institution of IPR against SK nexilis regarding copper foil patents.
Solus Advanced Materials Co., Ltd. et al. v.SK nexilis Co., Ltd.
Solus Advanced Materials Co., Ltd.'s request for rehearing was denied by the PTAB, upholding the initial decision to deny institution of IPR against SK nexilis's copper foil patent.
Capital One, National Association et al. v.--
Hulu and Capital One settled their dispute with patent owner Implicit over U.S. Patent 8,056,075 B2. The PTAB granted a motion to terminate the IPR and ordered the settlement agreements kept confidential.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
Micron Technology challenged YANGTZE MEMORY TECHNOLOGIES COMPANY over its 3D NAND Memory technology in an IPR proceeding. The PTAB institution decision found a reasonable likelihood of obviousness based on prior art, moving the case into trial preparation.
Micron Technology, Inc. et al. v.YANGTZE MEMORY TECHNOLOGIES COMPANY, LTD.
The PTAB issued a Final Written Decision denying the Petitioner's challenge to four claims related to 3D memory devices. The Board found that the Petitioner failed to establish obviousness over prior art references, specifically Toyama.
Teladoc Health, Inc. v.Data Health Partners, Inc.
The PTAB issued a Final Written Decision finding that numerous claims of the patent were unpatentable based on obviousness. The Petitioner successfully demonstrated that various combinations of prior art references rendered the claimed features predictable to one skilled in the art.
Air Products and Chemicals, Inc. v.EVONIK OPERATIONS GMBH et al.
The IPR petition against EVONIK's gas separation membrane technology failed as the Petitioner could not establish unpatentability. The Board found that the combination of cited prior art references lacked a sufficient motivation to combine, upholding the patent's validity.
Micron Technology, Inc. et al. v.Yangtze Memory Technologies Company, Ltd.
Micron Technology successfully challenged several claims in the NAND Flash patent, establishing a reasonable likelihood of prevailing on its obviousness grounds. The Board found that modifying TAC shapes and implementing dummy channels were simple advancements supported by prior art.
Capital One, National Association v.--
Capital One and Implicit, LLC settled their IPR dispute over a payment‑card fraud patent, leading the PTAB to terminate the proceeding before a trial was instituted.
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