Micron Technology, Inc. et al. v. Yangtze Memory Technologies Company, Ltd.

PGR2025-00021

Micron has filed a post‑grant review petition against Yangtze Memory’s 3D NAND ‘838 patent, asserting that 15 claims are obvious over prior art such as Kim and Lee. The petition seeks institution and cancellation of the challenged claims.

Jurisdiction
US PTAB
Case Number
PGR2025-00021
Decision Date
1 June 2025
Filing Date
1 June 2025

Detailed Summary

In a petition for post‑grant review (PGR2025‑00021), Micron Technology, Inc. challenges claims 1, 3‑7, and 12‑20 of U.S. Patent No. 12,010,838, which cover a staircase structure for 3D memory devices. Micron contends that the claims are obvious in view of multiple prior‑art references, including U.S. Patent No. 10,229,929 (Kim) and U.S. Patent Publication No. 2014/0191389 A1 (Lee), as well as Yang, Haller, and Park for specific limitations. The petition argues there are no secondary considerations supporting patentability and that no § 314 discretionary denial applies, requesting the PTAB to institute the proceeding and cancel the challenged claims.

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Micron Technology, Inc. et al. vs Yangtze Memory Technologies Company, Ltd. is valuable context for structuring arguments or assessing risk in similar proceedings.

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Disclaimer: This page contains an automated summary based on publicly available judicial records. The content is generated for informational purposes only and does not constitute legal advice. Always verify details against the original source judgment before relying on this information for any legal purpose. If you believe any information is inaccurate, please contact us.

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