Micron Technology, Inc. et al. v. Yangtze Memory Technologies Company, Ltd.

IPR2025-00117

Micron Technology has filed an IPR petition challenging all 19 claims of Yangtze Memory’s 3D NAND word‑line contact patent. The petition asserts obviousness over Kim, Park, and Fang references and argues there are no discretionary grounds to deny institution.

Jurisdiction
US PTAB
Case Number
IPR2025-00117
Filing Date
11 December 2024
Status
ok
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