Micron Technology, Inc. et al. v. Yangtze Memory Technologies Company, Ltd.

IPR2025-00117

Micron Technology has filed an IPR petition challenging all 19 claims of Yangtze Memory’s 3D NAND word‑line contact patent. The petition asserts obviousness over Kim, Park, and Fang references and argues there are no discretionary grounds to deny institution.

Jurisdiction
US PTAB
Case Number
IPR2025-00117
Decision Date
11 December 2024
Filing Date
11 December 2024

Detailed Summary

In a petition for inter partes review (IPR2025-00117), Micron Technology seeks to invalidate claims 1‑19 of U.S. Patent No. 10,672,711 owned by Yangtze Memory Technologies. The patent covers a word‑line contact structure for three‑dimensional memory devices. Micron contends that each claim is obvious in view of prior‑art references Kim, Park, and Fang, either alone or in combination, and that the Board should not exercise discretionary denial under §314 or §325(d). The petition includes detailed claim‑by‑claim mappings to the prior art and cites numerous Federal Circuit precedents. Micron requests the Board institute the IPR and find the challenged claims unpatentable.

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Micron Technology, Inc. et al. vs Yangtze Memory Technologies Company, Ltd. is valuable context for structuring arguments or assessing risk in similar proceedings.

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