Micron Technology, Inc. et al. v. Yangtze Memory Technologies Company, Ltd.

IPR2025-00034

Yangtze Memory Technologies seeks Director Review of the PTAB’s decision to institute an IPR against Micron’s 3D NAND patent, arguing the Board relied on unsupported expert testimony and failed to deny institution despite weak merits.

Jurisdiction
US PTAB
Case Number
IPR2025-00034
Decision Date
10 November 2024
Filing Date
10 November 2024

Detailed Summary

In a Request for Director Review, Yangtze Memory Technologies (YMTC) challenges the PTAB’s institution of an inter partes review of its 3D NAND patent (U.S. Patent No. 10,879,254) by Micron Technology. YMTC contends the Board erred by accepting Dr. Lee’s conclusory expert testimony to fill a missing "simultaneously etching" limitation that the cited prior art—Nakajima, Tessariol, and Mushiga—does not disclose. Additionally, YMTC argues the Board improperly declined to exercise its discretion to deny institution, despite finding the petition’s merits “not particularly strong” and that nine of fifteen challenged claims lack a reasonable likelihood of success. The Patent Owner requests vacatur of the institution decision under 35 U.S.C. §311(b).

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Micron Technology, Inc. et al. vs Yangtze Memory Technologies Company, Ltd. is valuable context for structuring arguments or assessing risk in similar proceedings.

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Disclaimer: This page contains an automated summary based on publicly available judicial records. The content is generated for informational purposes only and does not constitute legal advice. Always verify details against the original source judgment before relying on this information for any legal purpose. If you believe any information is inaccurate, please contact us.

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