Yangtze Memory Technologies Company, Ltd. et al. v. Micron Technology, Inc. et al.

IPR2025-00499

Micron successfully opposes Yangtze Memory’s request for Director Review of a PTAB decision denying institution of an IPR on its 3D NAND patent. The Board finds Yangtze’s arguments unsubstantiated and denies the review.

Jurisdiction
US PTAB
Case Number
IPR2025-00499
Decision Date
14 February 2025
Filing Date
14 February 2025

Detailed Summary

In IPR2025-00499, Micron Technology, Inc. challenges Yangtze Memory Technologies Company, Ltd.’s request for Director Review of the PTAB’s decision to deny institution of an inter partes review of U.S. Patent 8,803,214 covering 3D NAND flash memory. Yangtze argues lack of parallel litigation, claim similarity to related patents, examiner error, and procedural violations of the APA and Accardi doctrine. The Patent Owner’s response demonstrates that Yangtze mischaracterizes claim overlap, fails to provide specific claim language, waived procedural arguments, and offers no persuasive justification for institution. Citing precedent and statutory requirements, the Board concludes the petition lacks merit and recommends denial of the director review request.

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Yangtze Memory Technologies Company, Ltd. et al. vs Micron Technology, Inc. et al. is valuable context for structuring arguments or assessing risk in similar proceedings.

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Disclaimer: This page contains an automated summary based on publicly available judicial records. The content is generated for informational purposes only and does not constitute legal advice. Always verify details against the original source judgment before relying on this information for any legal purpose. If you believe any information is inaccurate, please contact us.

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