Yangtze Memory Technologies Company, Ltd. et al. v. Micron Technology, Inc. et al.

IPR2025-00499

Yangtze Memory Technologies petitions the PTAB to invalidate three claims of Micron's 3D NAND patent, citing anticipation by Lung and obviousness over Park, Fukuzumi, and Mokhlesi. The petitioner argues discretionary denial does not apply and seeks cancellation of claims 8, 13, and 21.

Jurisdiction
US PTAB
Case Number
IPR2025-00499
Filing Date
14 February 2025
Status
ok

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