Yangtze Memory Technologies Company, Ltd. et al. v. Micron Technology, Inc. et al.

IPR2025-00499

Yangtze Memory Technologies petitions the PTAB to invalidate three claims of Micron's 3D NAND patent, citing anticipation by Lung and obviousness over Park, Fukuzumi, and Mokhlesi. The petitioner argues discretionary denial does not apply and seeks cancellation of claims 8, 13, and 21.

Jurisdiction
US PTAB
Case Number
IPR2025-00499
Decision Date
14 February 2025
Filing Date
14 February 2025

Detailed Summary

In IPR2025-00499, Yangtze Memory Technologies Company, Ltd. challenges U.S. Patent 8,803,214 owned by Micron Technology, Inc., asserting that claims 8, 13, and 21 are anticipated by U.S. Patent Application Publication No. 2011/0286283 (Lung) under pre‑AIA 35 U.S.C. §102(e) and rendered obvious by Lung under §103. Additional obviousness grounds are presented for the same claims in view of the combination of Park with Mokhlesi and Fukuzumi with Mokhlesi, also under §103. The petition argues that the Board should not exercise discretionary denial under §§ 325(d) and 314(a) and requests that the Board cancel the challenged claims. No institution decision has been made, and the proceeding remains at the petition stage.

Practitioner Note

This case demonstrates the evidentiary and procedural standards applied in patent matters before local courts. Understanding the court's reasoning in Yangtze Memory Technologies Company, Ltd. et al. vs Micron Technology, Inc. et al. is valuable context for structuring arguments or assessing risk in similar proceedings.

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